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Dual Power
VMK 90-02T2
V DSS
= 200 V
MOSFET Module
I D25 = 83 A
R DS(on) = 25 m W
Common-Source connected
4 5
1
2
3
6 7
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-240 AA
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 6.8 k W
Continuous
200
200
± 20
V
V
V
E 72873
1
2
3
6
7
4
5
V GSM
I D25
I D80
Transient
T C = 25 ° C
T C = 80 ° C
± 30
83
62
V
A
A
I DM
P D
T C = 25 ° C, t p = 10 m s, pulse width limited by T JM
T C = 25 ° C, T J = 150 ° C,
330
380
A
W
1, 3 = Drain,
5, 6 = Gate,
2 = Common Source
4, 7 = Kelvin Source
T J
T JM
-40 ... +150
150
° C
° C
Features
T stg
-40 ... +125
° C
q
q
Two MOSFET with common source
International standard package
V ISOL
50/60 Hz
I ISOL ￡ 1 mA
t = 1 min
t=1s
2500
3000
V~
V~
q
JEDEC TO-240 AA
Direct copper bonded Al 2 O 3 ceramic
M d
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
q
q
base plate
Isolation voltage 3000 V~
Low R DS(on) HDMOS TM process
Weight
Typical including screws
90
g
q
Low package inductance for high
speed switching
q
q
Kelvin source contact
Keyed twin plugs
Push-pull inverters
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
q
Switched-mode and resonant-mode
q
V DSS
V GS(th)
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 3 mA
200
2
4
V
V
q
q
power supplies
Uninterruptible power supplies (UPS)
AC static switches
I GSS
V GS = ± 20 V DC, V DS = 0
500 nA
Easy to mount with two screws
I DSS
V DS = 0.8 ? V DSS , V GS = 0 V, T J = 25 ° C
V GS = 0 V, T J = 125 ° C
400 m A
2 mA
Advantages
q
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
25 m W
q
q
q
Space and weight savings
High power density
Low losses
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
1-4
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